PART |
Description |
Maker |
PSD835G2V-90U |
Flash PSD, 3V Supply, for 8-bit MCUs 4Mbit 256 Kbit Dual Flash Memories and 64Kbit SRAM
|
ST Microelectronics
|
PSD854212JIT PSD854212JT PSD854212MIT PSD854212MT |
Flash In-System Programmable ISP Peripherals For 8-bit MCUs FLASH IN-SYSTEM PROGRAMMABLE (ISP) PERIPHERALS FOR 8-BIT MCUS Flash PSD, 3.3V Supply, for 8-bit MCUs 2 Mbit 256 Kbit Dual Flash Memories and 64 Kbit SRAM
|
STMicroelectronics ST Microelectronics
|
AN1237 |
DRIVING AN M88X3FXX FLASH PSD DEVICE FROM AN M68HC11
|
SGS Thomson Microelectronics
|
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
|
M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆 32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics 意法半导 STMicroelectronics N.V. ST Microelectronics
|
S3931 |
One-dimensional PSD
|
N.A.
|
M28W160ECT85N1T M28W160ECB85ZB1T M28W160ECB85N1T M |
16 Mbit (1Mb x16/ Boot Block) 3V Supply Flash Memory 16 Mbit (1Mbx16, Boot Block) 3V Supply Flash Memory 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory 16兆位兆x16插槽,引导块V电源快闪记忆
|
ST Microelectronics STMicroelectronics N.V. 意法半导
|
AM29F002BT-90ED AM29F002BB-70ED AM29F002NBB-70PD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 Flash Memory IC; Package/Case:32-DIP; Supply Voltage Max:5V; Access Time, Tacc:70ns RoHS Compliant: Yes
|
SPANSION LLC
|
C3683-01 |
Signal processing circuit for 1-D PSD
|
HAMAMATSU[Hamamatsu Corporation]
|
T7234 |
Compliance with the New ETSI PSD Requirement
|
List of Unclassifed Manufacturers
|
M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory HDR P R 4P PW N 1X4 .100TQ BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics ST Microelectronics 意法半导
|